Ultratech
🏢 View company profile →136Patents
105Active
136Granted
55Portfolio score
Filing activity: Mar 27, 2000 → Nov 22, 2021 · 28 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9929011B2 | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations | Performing Operations; Transporting | 447 | Active |
| US7154066B2 | Laser scanning apparatus and methods for thermal processing | Performing Operations; Transporting | 62 | Expired |
| US7098155B2 | Laser thermal annealing of lightly doped silicon substrates | Performing Operations; Transporting | 36 | Expired |
| US8067305B2 | Electrically conductive structure on a semiconductor substrate formed from printing | Electricity | 32 | Active |
| US7763828B2 | Laser thermal processing with laser diode radiation | Performing Operations; Transporting | 31 | Expired |
| US6863403B2 | Deep ultraviolet unit-magnification projection optical system and projection exposure apparatus | Physics | 30 | Expired |
| US6879383B2 | Large-field unit-magnification projection system | Physics | 28 | Expired |
| US6813098B2 | Variable numerical aperture large-field unit-magnification projection system | Physics | 28 | Expired |
| US8014427B1 | Line imaging systems and methods for laser annealing | Electricity | 22 | Active |
| US6825101B1 | Methods for annealing a substrate and article produced by such methods | Electricity | 20 | Expired |
| US7148159B2 | Laser thermal annealing of lightly doped silicon substrates | Performing Operations; Transporting | 19 | Expired |
| US7157660B2 | Laser scanning apparatus and methods for thermal processing | Electricity | 18 | Expired |
| US7482254B2 | Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating | Electricity | 17 | Active |
| US7744274B1 | Methods and apparatus for temperature measurement and control on a remote substrate surface | Physics | 17 | Active |
| US7494942B2 | Laser thermal annealing of lightly doped silicon substrates | Performing Operations; Transporting | 17 | Active |
| US7847213B1 | Method and apparatus for modifying an intensity profile of a coherent photonic beam | Performing Operations; Transporting | 16 | Active |
| US7514305B1 | Apparatus and methods for improving the intensity profile of a beam image used to process a substrate | Electricity | 16 | Active |
| US8309474B1 | Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication | Electricity | 16 | Active |
| US7145104B2 | Silicon layer for uniformizing temperature during photo-annealing | Electricity | 15 | Expired |
| US7433051B2 | Determination of lithography misalignment based on curvature and stress mapping data of substrates | Electricity | 15 | Active |
| US7253376B2 | Methods and apparatus for truncating an image formed with coherent radiation | Performing Operations; Transporting | 14 | Expired |
| US6844250B1 | Method and system for laser thermal processing of semiconductor devices | Electricity | 14 | Expired |
| US7399945B2 | Method of thermal processing a substrate with direct and redirected reflected radiation | Performing Operations; Transporting | 13 | Active |
| US6898306B1 | Machine-independent alignment system and method | Physics | 12 | Expired |
| US10316406B2 | Methods of forming an ALD-inhibiting layer using a self-assembled monolayer | Electricity | 12 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.