Memory device including page buffers
US10319416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Oct 25, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a memory cell array; bit lines including even and odd bit lines extending in a first direction and alternately disposed; cache latches including even cache latches which exchange data with the memory cell array through the even bit lines and odd cache latches which exchange data with the memory cell array through the odd bit lines; 2^k data lines, where k is a natural number equal to or greater than 2, respectively corresponding to 2^k input/output pins; and column merge units respectively allocated to the input/output pins, and each suitable for coupling any one of the even cache latches or any one of the odd cache latches to a data line corresponding to an input/output pin to which it is allocated. A pitch of the column merge units in a second direction intersecting the first direction is greater than a pitch of the cache latches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.