Patent · US Active

Memory with margin current addition and related methods

US10319438B2 · kind B2 · utility

1Cited by

7References

35Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Emanuela Calvetti · Merate, IT
Marcella Carissimi · Dalmine, IT
Marco Pasotti · Pavia, IT

Key dates

Filing date	Oct 30, 2017
Grant date	Jun 11, 2019
Priority date	—
Expiry date	Oct 30, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0066
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In accordance with an embodiment, a memory includes: a memory element, a sense amplifier circuit configured to sense a difference during a sense operation between a sense current passing through the memory element and a reference current, and a margin current branch coupled in parallel with the memory element and configured to selectively add a margin current to the sense current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.