Marco Pasotti
89Patents
16h-index
71Co-inventors
87Inventor score
Filing activity: Sep 27, 1996 → Jun 18, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7110289B1 | Method and system for controlling MRAM write current to reduce power consumption | Physics | 153 | Expired |
| US6169691A | Method for maintaining the memory content of non-volatile memory cells | Physics | 118 | Expired |
| US6392931B1 | Method for high precision programming nonvolatile memory cells, with optimized programming speed | Physics | 62 | Expired |
| US6687167B2 | EEPROM flash memory erasable line by line | Physics | 55 | Expired |
| US6011715A | Method for multilevel programming of a nonvolatile memory, and a multilevel nonvolatile memory | Physics | 54 | Expired |
| US6400607B1 | Reading circuit for a non-volatile memory | Physics | 54 | Expired |
| US5973959A | Circuit and method of reading cells of an analog memory array, in particular of the flash type | Physics | 34 | Expired |
| US6655758B2 | Method for storing data in a nonvolatile memory | Physics | 33 | Expired |
| US6535428B2 | Sensing circuit for memory cells | Physics | 21 | Expired |
| US6466481B1 | Device and method for programming nonvolatile memory cells with automatic generation of programming voltage | Physics | 20 | Expired |
| US6232753A | Voltage regulator for driving plural loads based on the number of loads being driven | Physics | 18 | Expired |
| US6473340B1 | Reading method and circuit for a non-volatile memory | Physics | 17 | Expired |
| US6091642A | Method for controlled erasing memory devices, in particular analog and multi-level flash-EEPROM devices | Physics | 17 | Expired |
| US6292398A | Method for the in-writing verification of the threshold value in non-volatile memories | Physics | 17 | Expired |
| US6016272A | High-precision analog reading circuit for flash analog memory arrays using negative feedback | Physics | 17 | Expired |
| US6081448A | Method and device for analog programming of flash EEPROM memory cells with autoverify | Physics | 17 | Expired |
| US6034888A | Reading circuit for nonvolatile analog memories, in particular flash-eeprom memories, with direct and constant current threshold voltage reading | Physics | 16 | Expired |
| US7504862B2 | Level shifter translator | Electricity | 14 | Expired |
| US6195289A | Device for reading analog nonvolatile memory cells, in particular flash cells | Physics | 12 | Expired |
| US6069822A | Method for parallel programming of nonvolatile memory devices, in particular flash memories and EEPROMS | Physics | 11 | Expired |
| US6381177B1 | Method for controlled soft programming of non-volatile memory cells, in particular of the flash EEPROM and EPROM type | Physics | 10 | Expired |
| US8693256B2 | FTP memory device with single selection transistor | Physics | 9 | Active |
| US8264872B2 | Column decoder for non-volatile memory devices, in particular of the phase-change type | Physics | 9 | Active |
| US6163483A | Circuit for parallel programming nonvolatile memory cells, with adjustable programming speed | Physics | 9 | Expired |
| US9634562B1 | Voltage doubling circuit and charge pump applications for the voltage doubling circuit | Electricity | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.