Semiconductor device with a gate electrode positioned in a semiconductor substrate
US10319831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2015 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Feb 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Technique disclosed herein can suppress performance variation among semiconductor devices to be manufactured upon manufacturing each semiconductor device by forming diffusion layer by ion implantation to semiconductor substrate after etching. A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes an emitter region, a top body region, a barrier region, a bottom body region, a drift region, a collector region, a trench, a gate insulating film, and a gate electrode. A front surface of the gate electrode is provided at a deeper position than a front surface of the semiconductor substrate. Within the gate electrode, a front surface of a first portion at a widthwise center of a trench is provided at a shallower position than a front surface of a second portion in contact with the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.