Inventor · Nisshin, JP

Tomoharu Ikeda

7Patents
2h-index
10Co-inventors
37Inventor score

Filing activity: Sep 14, 2012 → Feb 29, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US8659052B2 Semiconductor device and method for manufacturing the same Electricity 4 Active
US9853141B2 Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes Electricity 2 Active
US9780205B2 Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof Electricity 1 Active
US9698017B2 Manufacturing method of semiconductor device Electricity 0 Active
US9755042B2 Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device Electricity 0 Active
US10020390B2 Semiconductor device and semiconductor device manufacturing method Electricity 0 Active
US10319831B2 Semiconductor device with a gate electrode positioned in a semiconductor substrate Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.