Semiconductor devices and methods of fabricating the same
US10319859B2 · kind B2 · utility
0Cited by
14References
20Claims
0Family size
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Key dates
| Filing date | Dec 18, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Dec 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device is disclosed. The device includes a substrate including an active region defined by a device isolation layer, a fin pattern protruding from the substrate and extending in a first direction, the fin pattern including a gate fin region and a source/drain fin region, a gate pattern disposed on the gate fin region to extend in a second direction crossing the first direction, and a source/drain portion provided on a sidewall of the source/drain fin region. When measured in the second direction, a width of the source/drain fin region is different from a width in the second direction of the gate fin region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.