Projection exposure apparatus and method for measuring an imaging aberration

US10324380B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Stig Bieling · Aalen, DE
• Helmut Haidner · Aalen, DE

Key dates

• Filing date: Jan 12, 2018
• Grant date: Jun 18, 2019
• Expiry date: Jan 12, 2038

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/7085
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A microlithographic projection exposure apparatus (10) includes a projection lens (26) that images an object field (22) arranged in a mask plane (24) onto a substrate (28) during exposure operation of the projection exposure apparatus, and an illumination system (16) that has: an exposure illumination beam path (44) for radiating illumination radiation (14) onto the object field on the illumination side with respect to the mask plane, a measurement illumination beam path (48) for irradiating a measurement structure (54) arranged in the mask plane with the illumination radiation, and a scattering structure (50) arranged on the illumination side with respect to the mask plane and outside the exposure illumination beam path. The measurement illumination beam path extends via the scattering structure and runs rectilinearly between the scattering structure and the mask plane.