Methods, apparatus and system for threshold voltage control in FinFET devices
US10325824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2017 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Jun 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one method, apparatus and system are disclosed for controlling threshold voltage values for a plurality of transistor devices. Determine a first threshold voltage of a first transistor gate comprising a first gate channel having a first length. Determine a second length of a second gate channel of a second transistor gate. Determining a process adjustment of the second gate based on the second length for providing a second threshold voltage of the second transistor gate. The second threshold voltage is within a predetermined range of the first threshold voltage. Provide data relating to process adjustment to a process controller for performing the process adjustment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.