Method for manufacturing semiconductor device
US10325920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2016 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Nov 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/10
Abstract
A method for manufacturing a semiconductor device includes forming a first mask layer having a first opening on an underlying layer; forming a first layer in a space where the underlying layer is selectively removed via the first opening; forming a second mask layer on the first mask layer and the first layer, the second mask layer having a second opening crossing the first opening; and selectively removing the first layer at a portion where the first opening and the second opening cross. At least one of the first and second mask layers having openings including the first or second opening, the openings being arranged in the first mask layer along a first direction, and/or being arranged in the second mask layer along a second direction, the first opening crossing the second opening in the first direction, and the second opening crossing the first opening in the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.