Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US10325926B2 · kind B2 · utility
2Cited by
156References
20Claims
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Key dates
| Filing date | Mar 20, 2017 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Mar 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating semiconductor-metal-on-insulator (SMOI) structures include forming an acceptor wafer including an insulator material on a first semiconductor substrate, forming a donor wafer including a conductive material and an amorphous silicon material on a second semiconductor substrate, and bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer. SMOI structures formed from such methods are also disclosed, as are semiconductor devices including such SMOI structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.