High density and reliable vertical natural capacitors
US10325979B1 · kind B1 · utility
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23Claims
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Key dates
| Filing date | Jan 2, 2018 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Jan 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the disclosure are directed to an integrated circuit. The integrated circuit may include a substrate, a first group of metal layers including a plurality of first fingers over the substrate, wherein the first fingers are formed without a via. The integrated circuit may further include a second group of metal layers including a plurality of second fingers over the first group of metal layers, wherein the second fingers are formed with vias, and wherein the first and the second group of metal layers are formed by a processing technology node of 7 nm or below.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.