Inventor · Fishkill, NY, US

Junjing Bao

78Patents
8h-index
66Co-inventors
77Inventor score

Filing activity: Sep 20, 2010 → Sep 17, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US10177031B2 Subtractive etch interconnects Electricity 19 Active
US9793164B2 Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices Electricity 18 Active
US9171801B2 E-fuse with hybrid metallization Electricity 17 Active
US9536830B2 High performance refractory metal / copper interconnects to eliminate electromigration Electricity 13 Active
US9799560B2 Self-aligned structure Electricity 13 Active
US9685404B2 Back-end electrically programmable fuse Electricity 11 Active
US9059170B2 Electronic fuse having a damaged region Electricity 11 Active
US9324634B2 Semiconductor interconnect structure having a graphene-based barrier metal layer Electricity 8 Active
US8129269B1 Method of improving mechanical properties of semiconductor interconnects with nanoparticles Emerging Cross-Sectional Technologies 8 Active
US8736020B2 Electronic anti-fuse Electricity 7 Active
US9953979B2 Contact wrap around structure Electricity 7 Active
US8962467B2 Metal fuse structure for improved programming capability Emerging Cross-Sectional Technologies 6 Active
US9293412B2 Graphene and metal interconnects with reduced contact resistance Electricity 6 Active
US9202743B2 Graphene and metal interconnects Electricity 6 Active
US10062763B2 Method and apparatus for selectively forming nitride caps on metal gate Electricity 5 Active
US9324635B2 Semiconductor interconnect structure having a graphene-based barrier metal layer Electricity 5 Active
US8916461B2 Electronic fuse vias in interconnect structures Electricity 5 Active
US9064871B2 Vertical electronic fuse Electricity 5 Active
US10651122B1 Integrated circuit (IC) interconnect structure having a metal layer with asymmetric metal line-dielectric structures supporting self-aligned vertical interconnect accesses (VIAS) Electricity 5 Active
US9455186B2 Selective local metal cap layer formation for improved electromigration behavior Electricity 4 Active
US9536842B2 Structure with air gap crack stop Electricity 4 Active
US9543248B2 Integrated circuit devices and methods Electricity 4 Active
US9865798B2 Electrode structure for resistive memory device Electricity 4 Active
US10833017B2 Contact for semiconductor device Electricity 3 Active
US9034664B2 Method to resolve hollow metal defects in interconnects Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.