Switching element and method of manufacturing the same
US10326015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2017 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Jan 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A switching element may include a semiconductor substrate, first and second trenches, a gate insulating layer, an interlayer insulating layer covering the semiconductor substrate, and an electrode on the interlayer insulating layer. A wide portion and a narrow portion may be arranged alternately between the first and second trenches. The interlayer insulating layer may include a contact hole in the wide portion. The electrode may be in contact with the semiconductor substrate within the contact hole. The semiconductor substrate may include an upper n-type region in contact with the gate insulating layer in the narrow portion and in contact with the electrode, a p-type body contact region in contact with the electrode, a p-type body region in contact with the gate insulating layer in the narrow portion, and a lower n-type region in contact with the gate insulating layer in the narrow portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.