Growth method of aluminum gallium nitride
US10326046B2 · kind B2 · utility
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Key dates
| Filing date | Sep 2, 2016 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Dec 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A growth method of aluminum gallium nitride is disclosed. The method includes the steps of: providing a substrate; forming a first aluminum gallium nitride layer on the substrate at a first temperature; and forming a second aluminum gallium nitride layer, on the first aluminum gallium nitride layer, at a second temperature. The first temperature is higher than the second temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.