EPILEDS TECHNOLOGIES, INC.
8Patents
8Active
8Granted
43Portfolio score
Filing activity: May 16, 2007 → Dec 12, 2019 · 1 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8097476B2 | Light emitting diode and wafer level package method, wafer level bonding method thereof, and circuit structure for wafer level package | Electricity | 1 | Active |
| US11158666B2 | Multiple wavelength light-emitting diode epitaxial structure with asymmetric multiple quantum wells | Electricity | 1 | Active |
| US9666429B1 | Method for growing group III nitride | Electricity | 1 | Active |
| US9812322B2 | Sapphire substrate with patterned structure | Electricity | 0 | Active |
| US10326046B2 | Growth method of aluminum gallium nitride | Electricity | 0 | Active |
| US10516250B1 | Near-infrared vertical-cavity surface-emitting laser and transfer method thereof | Electricity | 0 | Active |
| US10326049B1 | UV light-emitting diode | Electricity | 0 | Active |
| US11165003B2 | Ultraviolet light-emitting diode | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.