UV light-emitting diode
US10326049B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2018 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Aug 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An UV light-emitting diode includes a patterned substrate, a template layer, a growth layer, a first n-type semiconductor layer, an intrinsic semiconductor layer, a second n-type semiconductor layer, a plurality of layers of multiple quantum wells, a barrier layer, a first electron blocking layer, a second electron blocking layer, a first p-type semiconductor layer and a second p-type semiconductor layer in sequence from a bottom layer to a top layer. Whereas the aforementioned layers all include Group III nitride materials and the number of layers for the plurality of layers of multiple quantum wells is at least five layers. Because the first n-type semiconductor layer, the first p-type semiconductor layer, and the plurality of layers of multiple quantum wells all contain aluminum, short-wavelength UV light is emitted when a current is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.