Spin hall effect (SHE) assisted three-dimensional spin transfer torque magnetic random access memory (STT-MRAM)
US10326073B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The various implementations described herein include methods, devices, and systems for operating magnetic memory devices. In one aspect, a magnetic memory device includes: (1) a core; (2) a plurality of layers that surround the core in succession; (3) a first input terminal coupled to the core and configured to receive a first current, where: (a) the first current flows radially from the core through the plurality of layers; and (b) the radial flow of the first current imparts a torque on, at least, a magnetization of an inner layer of the plurality of layers; and (4) a second input terminal coupled to the core and configured to receive a second current, where: (i) the second current imparts a Spin Hall Effect (SHE) around a perimeter of the core; and (ii) the SHE contributes to the torque imparted on the magnetization of the inner layer by the first current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.