Selective titanium nitride deposition using oxides of lanthanum masks
US10332747B1 · kind B1 · utility
267Cited by
4References
17Claims
0Family size
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Key dates
| Filing date | Jan 24, 2018 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Jan 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In an exemplary method, a dielectric layer is deposited on a substrate. A masking layer is formed over a first region and a second region of the dielectric layer. The masking layer is made of an oxide of lanthanum. The masking layer is removed from the second region of the dielectric layer. A work function layer is formed directly on only the second region of the dielectric layer. The work function layer is made of titanium nitride that is formed by using a combination of titanium tetrachloride and ammonia (TiCl4/NH3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.