Etch rate modulation through ion implantation

US10332748B2 · kind B2 · utility

Assignee

• Varian Semiconductor Equipment Associates, Inc. · US

Inventors

• Rajesh Prasad · Lexington, US
• Steven R. Sherman · Newton, US
• Andrew Waite · Beverly, US
• Sungho Jo · East Sharon, US
• Kyu-Ha Shim · Andover, US
• Guy Oteri · Merrimac, US
• Somchintana Norasetthekul · College Station, US

Key dates

• Filing date: Feb 21, 2018
• Grant date: Jun 25, 2019
• Expiry date: Feb 21, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/924
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and optionally the underlying material are disclosed. An etch rate modifying species is implanted into the hard mask after the mask etching process is completed. This etch rate modifying species increases the difference between the etch rate of the mask and the etch rate of the underlying material to help preserve the integrity of the mask during a subsequent etching process. In some embodiments, the etch rate of the mask is decreased by the etch rate modifying species. In certain embodiments, the etch rate of the underlying material is increased by the etch rate modifying species.