Kyu-Ha Shim
16Patents
2h-index
56Co-inventors
53Inventor score
Filing activity: Sep 23, 2006 → Feb 9, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7993698B2 | Techniques for temperature controlled ion implantation | Electricity | 4 | Active |
| US10332748B2 | Etch rate modulation through ion implantation | Emerging Cross-Sectional Technologies | 2 | Active |
| US8283265B2 | Method to enhance charge trapping | Electricity | 2 | Active |
| US9934982B2 | Etch rate modulation through ion implantation | Emerging Cross-Sectional Technologies | 2 | Active |
| US8716155B2 | Method to enhance charge trapping | Electricity | 2 | Active |
| US10354875B1 | Techniques for improved removal of sacrificial mask | Electricity | 1 | Active |
| US8012843B2 | Optimized halo or pocket cold implants | Electricity | 1 | Active |
| US10811257B2 | Techniques for forming low stress etch-resistant mask using implantation | Electricity | 1 | Active |
| US11114299B2 | Techniques for reducing tip to tip shorting and critical dimension variation during nanoscale patterning | Electricity | 0 | Active |
| US12142475B2 | Sequential plasma and thermal treatment | Electricity | 0 | Active |
| US11594441B2 | Handling for high resistivity substrates | Chemistry; Metallurgy | 0 | Active |
| US11728383B2 | Localized stressor formation by ion implantation | Electricity | 0 | Active |
| US10930508B2 | Replacement metal gate formation of PMOS ultra-low voltage devices using a thermal implant | Electricity | 0 | Active |
| US10204909B2 | Non-uniform gate oxide thickness for DRAM device | Electricity | 0 | Active |
| US12094709B2 | Plasma treatment process to densify oxide layers | Electricity | 0 | Active |
| US11664419B2 | Isolation method to enable continuous channel layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.