Method of forming compound semiconductor body
US10332876B2 · kind B2 · utility
12Cited by
10References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 14, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Sep 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first semiconductor body including type IV semiconductor material is provided. A second semiconductor body including type III-V semiconductor material is provided. A first adhesion layer is formed on the first semiconductor body. A second adhesion layer is formed on the second semiconductor body. The first and the second semiconductor bodies are bonded together by adhering the first and the second adhesion layers to one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.