Self-aligned contact (SAC) on gate for improving metal oxide semiconductor (MOS) varactor quality factor
US10333007B2 · kind B2 · utility
1Cited by
6References
19Claims
0Family size
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Key dates
| Filing date | Aug 25, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Aug 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A short-channel metal oxide semiconductor varactor may include a source region of a first polarity having a source via contact. The varactor may further include a drain region of the first polarity having a drain via contact. The varactor may further include a channel region of the first polarity between the source region and the drain region. The channel region may include a gate. The varactor may further include at least one self-aligned contact (SAC) on the gate and between the source via contact and the drain via contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.