Bin Yang
190Patents
12h-index
212Co-inventors
89Inventor score
Filing activity: Oct 2, 2003 → Jan 26, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9875784B1 | Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems | Electricity | 41 | Active |
| US7641865B2 | Flow control through plural, parallel connecting channels to/from a manifold | Emerging Cross-Sectional Technologies | 30 | Active |
| US8122909B2 | Surface features in microprocess technology | Emerging Cross-Sectional Technologies | 26 | Active |
| US8252245B2 | Partial boiling in mini and micro-channels | Mechanical Engineering; Lighting; Heating | 24 | Expired |
| US9101890B2 | Support for use in microchannel processing | Emerging Cross-Sectional Technologies | 19 | Active |
| US9406689B2 | Logic finFET high-K/conductive gate embedded multiple time programmable flash memory | Electricity | 18 | Active |
| US7442360B2 | Hydrogen peroxide production in microchannel reactors | Performing Operations; Transporting | 15 | Expired |
| US9576801B2 | High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory | Electricity | 15 | Active |
| US7622509B2 | Multiphase mixing process using microchannel process technology | Emerging Cross-Sectional Technologies | 15 | Active |
| US7468455B2 | Process and apparatus for improved methods for making vinyl acetate monomer (VAM) | Performing Operations; Transporting | 14 | Expired |
| US9583178B2 | SRAM read preferred bit cell with write assist circuit | Physics | 12 | Active |
| US6825080B1 | Method for forming a MIM capacitor | Electricity | 12 | Expired |
| US7959880B2 | Hydrogen peroxide production in microchannel reactors | Performing Operations; Transporting | 12 | Active |
| US9153642B2 | Metal-oxide-metal (MOM) capacitor with enhanced capacitance | Electricity | 10 | Active |
| US8294211B2 | Semiconductor transistor device structure with back side gate contact plugs, and related manufacturing method | Electricity | 10 | Active |
| US9134079B2 | Flow control through plural, parallel connection channels to/from a manifold | Emerging Cross-Sectional Technologies | 10 | Active |
| US7816411B2 | Multiphase mixing process using microchannel process technology | Emerging Cross-Sectional Technologies | 10 | Active |
| US10205018B1 | Planar double gate semiconductor device | Electricity | 9 | Active |
| US10734384B1 | Vertically-integrated two-dimensional (2D) semiconductor slabs in complementary field effect transistor (CFET) cell circuits, and method of fabricating | Electricity | 8 | Active |
| US8518758B2 | ETSOI with reduced extension resistance | Electricity | 8 | Active |
| US10084074B1 | Compound semiconductor field effect transistor gate length scaling | Electricity | 8 | Active |
| US9111635B2 | Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methods | Electricity | 8 | Active |
| US8278200B2 | Metal-semiconductor intermixed regions | Electricity | 8 | Active |
| US9059096B2 | Method to form silicide contact in trenches | Electricity | 8 | Active |
| US7780944B2 | Multi-stream microchannel device | Emerging Cross-Sectional Technologies | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.