Ultraviolet light emitting devices having a dielectric layer and a transparent electrode layer disposed in between patterned nitride semiconductor layers
US10333025B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2018 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Jun 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
An ultraviolet light emitting device including a first conductivity-type AlGaN semiconductor layer; an active layer disposed on the first conductivity-type AlGaN semiconductor layer and having an AlGaN semiconductor; a second conductivity-type AlGaN semiconductor layer disposed on the active layer and having an upper surface divided into a first region and a second region; second conductivity-type nitride patterns disposed on the first region of the second conductivity-type AlGaN semiconductor layer and having an energy band gap that is smaller than an energy band gap of the second conductivity-type AlGaN semiconductor layer; a transparent electrode layer covering the second conductivity-type nitride patterns and the second region of the second conductivity-type AlGaN semiconductor layer; a light-transmissive dielectric layer disposed on the transparent electrode layer between the second conductivity-type nitride patterns; and a metal electrode disposed on the transparent electrode layer overlying the second conductivity type nitride patterns and on the light-transmissive dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.