Joo Sung KIM
31Patents
4h-index
37Co-inventors
59Inventor score
Filing activity: Sep 22, 2006 → Aug 31, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7541206B2 | Nitride-based semiconductor light-emitting device and method of manufacturing the same | Electricity | 23 | Active |
| US7935554B2 | Semiconductor light emitting device and method of manufacturing the same | Electricity | 8 | Active |
| US7888694B2 | Nitride-based semiconductor light emitting device with light extraction layer formed within | Electricity | 6 | Active |
| US9337381B2 | Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure | Electricity | 6 | Active |
| US8946773B2 | Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure | Electricity | 4 | Active |
| US8587494B2 | Internal antenna providing impedance matching for multiband | Electricity | 4 | Active |
| US9136430B2 | Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure | Electricity | 3 | Active |
| US10333025B1 | Ultraviolet light emitting devices having a dielectric layer and a transparent electrode layer disposed in between patterned nitride semiconductor layers | Electricity | 3 | Active |
| US8183068B2 | Nitride-based semiconductor light emitting device and method of manufacturing the same | Electricity | 3 | Active |
| US9583340B2 | Semipolar nitride semiconductor structure and method of manufacturing the same | Electricity | 3 | Active |
| US8890184B2 | Nanostructured light-emitting device | Electricity | 3 | Active |
| US10483433B2 | Ultraviolet light emitting devices | Electricity | 2 | Active |
| US11075250B2 | Light-emitting device package, display device including the same, and method of manufacturing the same | Electricity | 2 | Active |
| US9666754B2 | Method of manufacturing semiconductor substrate and substrate for semiconductor growth | Electricity | 1 | Active |
| US9257599B2 | Semiconductor light emitting device including hole injection layer | Electricity | 1 | Active |
| US10686172B2 | Battery module assembly having stable fixing means for unit module | Emerging Cross-Sectional Technologies | 1 | Active |
| US10665832B2 | Battery pack comprising battery modules mounted in two layers | Emerging Cross-Sectional Technologies | 1 | Active |
| US12013295B2 | Composite comprising ionic liquid, pressure sensor comprising same, and method for manufacturing pressure sensor | Chemistry; Metallurgy | 1 | Active |
| US10784405B2 | Semiconductor light emitting device | Electricity | 1 | Active |
| US9190270B2 | Low-defect semiconductor device and method of manufacturing the same | Electricity | 1 | Active |
| US10622602B2 | Battery pack comprising battery modules mounted in two layers | General | 0 | Revoked |
| US12295195B2 | Light emitting device package with reliably formed switching unit | Electricity | 0 | Active |
| US11569417B2 | Method of manufacturing semiconductor light emitting device | Electricity | 0 | Active |
| US8835902B2 | Nano-structured light-emitting devices | Electricity | 0 | Active |
| US10964846B2 | Semiconductor light emitting device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.