Patent · US Active

Method for creating patterns

US10336023B2 · kind B2 · utility

0Cited by

4References

34Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Nicolas Posseme · Grenoble, FR
Stefan Landis · Tullins, FR
Lamia Nouri · Le Bicêtre, FR

Key dates

Filing date	Dec 22, 2015
Grant date	Jul 2, 2019
Priority date	—
Expiry date	Dec 22, 2035

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0136
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.