Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same

US10337104B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Satoko Gatineau · Seoul, KR
• Wontae Noh · Seoul, KR
• Daehyeon Kim · Hwaseong-si, KR
• Julien Gatineau · Ibaraki, JP
• Jean-Marc Girard · Versailles, FR

Key dates

• Filing date: Dec 30, 2016
• Grant date: Jul 2, 2019
• Expiry date: Dec 30, 2036

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C04B2235/48
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate, or keto-iminate, wherein R′ is a H or a C1-C4 hydrocarbon group; and L′ is NR″ or O, wherein R″ is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.