Inventor · Ibaraki, JP

Julien Gatineau

29Patents
4h-index
19Co-inventors
56Inventor score

Filing activity: Sep 26, 2005 → Apr 29, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US8227032B2 Method of forming silicon oxide containing films Electricity 453 Active
US8092721B2 Deposition of ternary oxide films containing ruthenium and alkali earth metals Chemistry; Metallurgy 7 Active
US8691668B2 Dihalide germanium(II) precursors for germanium-containing film depositions Chemistry; Metallurgy 6 Active
US9240319B2 Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition Chemistry; Metallurgy 5 Active
US7544389B2 Precursor for film formation and method for forming ruthenium-containing film Electricity 4 Expired
US8636845B2 Metal heterocyclic compounds for deposition of thin films Emerging Cross-Sectional Technologies 4 Active
US8101237B2 Tellurium precursors for film deposition Chemistry; Metallurgy 3 Active
US9206507B2 Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions Electricity 3 Active
US9109281B2 Metal heterocyclic compounds for deposition of thin films Emerging Cross-Sectional Technologies 3 Active
US8753718B2 Method for the deposition of a ruthenium-containing film Chemistry; Metallurgy 3 Active
US9633838B2 Vapor deposition of silicon-containing films using penta-substituted disilanes Electricity 2 Active
US8546276B2 Deposition of group IV metal-containing films at high temperature Chemistry; Metallurgy 2 Active
US8802194B2 Tellurium precursors for film deposition Chemistry; Metallurgy 2 Active
US9187511B2 Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules Chemistry; Metallurgy 1 Active
US8404306B2 Method for the deposition of a ruthenium containing film Chemistry; Metallurgy 1 Active
US9416443B2 Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors Electricity 1 Active
US10364259B2 Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same Chemistry; Metallurgy 1 Active
US8859047B2 Use of ruthenium tetroxide as a precursor and reactant for thin film depositions Electricity 0 Active
US10337104B2 Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same Chemistry; Metallurgy 0 Active
US9790591B2 Titanium-containing film forming compositions for vapor deposition of titanium-containing films Chemistry; Metallurgy 0 Active
US8309174B2 Heteroleptic iridium precursors to be used for the deposition of iridium-containing films Chemistry; Metallurgy 0 Active
US10309010B2 Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition Electricity 0 Active
US10465289B2 Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same Chemistry; Metallurgy 0 Active
US9543144B2 Vapor deposition of chalcogenide-containing films Electricity 0 Active
US8613976B2 Method of forming silicon oxide containing films Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.