Optical rule checking for detecting at risk structures for overlay issues
US10339261B2 · kind B2 · utility
0Cited by
7References
19Claims
0Family size
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Key dates
| Filing date | Dec 8, 2015 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Mar 2, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.