Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
US10339993B1 · kind B1 · utility
6Cited by
155References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Dec 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the free layer. The skyrmionic enhancement layer helps to initiate the switching of the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.