Semiconductor device manufacturing method, substrate processing apparatus, and recording medium
US10340134B2 · kind B2 · utility
4Cited by
0References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 20, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Jun 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing: performing a set m times (where m is an integer equal to or greater than 1), the set including supplying a precursor to the substrate and supplying a borazine compound to the substrate; and supplying an oxidizing agent to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.