Reliability caps for high-k dielectric anneals
US10340146B2 · kind B2 · utility
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3References
16Claims
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Key dates
| Filing date | Jul 12, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Jul 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures for reliability caps used in the manufacture of a field-effect transistor and methods for forming reliability caps used in the manufacture of a field-effect transistor. A layer comprised of a metal silicon nitride is deposited on a high-k dielectric material. The high-k dielectric material is thermally processed in an oxygen-containing ambient environment with the layer arranged as a cap between the high-k dielectric material and the ambient environment. Due at least in part to its composition, the layer blocks transport of oxygen from the ambient environment to the high-k dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.