Semiconductor device structure and method for forming the same
US10340190B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Nov 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first fin structure and a second fin structure over a substrate. The semiconductor device structure also includes a gate structure over the first and second fin structure. The semiconductor device structure further includes a source/drain structure over the first and second fin structure. The source/drain structure includes a first semiconductor layer over the first fin structure and a second semiconductor layer over the second fin structure. The source/drain structure also includes a third semiconductor layer covering the first and second semiconductor layers. The third semiconductor layer has a surface with [110] plane orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.