Inventor · Zhubeikou, TW

Li-Li Su

50Patents
3h-index
44Co-inventors
58Inventor score

Filing activity: Jan 20, 2016 → Apr 16, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9831116B2 FETS and methods of forming FETs Electricity 17 Active
US10453943B2 FETS and methods of forming FETS Electricity 10 Active
US10529803B2 Semiconductor device with epitaxial source/drain Electricity 5 Active
US11004724B2 FETS and methods of forming FETS Electricity 3 Active
US10340190B2 Semiconductor device structure and method for forming the same Electricity 3 Active
US10867861B2 Fin field-effect transistor device and method of forming the same Electricity 3 Active
US10950730B2 Merged source/drain features Electricity 2 Active
US10510607B1 Semiconductor device convex source/drain region Electricity 2 Active
US11444181B2 Source/drain formation with reduced selective loss defects Electricity 2 Active
US11205713B2 FinFET having a non-faceted top surface portion for a source/drain region Electricity 1 Active
US10468482B2 Semiconductor device and manufacturing method thereof Electricity 1 Active
US11728208B2 FETS and methods of forming FETS Electricity 1 Active
US11355641B2 Merged source/drain features Electricity 1 Active
US12255255B2 Method of manufacturing a FinFET with merged epitaxial source/drain regions Electricity 0 Active
US12419084B2 Methods of forming transistor source/drain regions comprising carbon liner layers Electricity 0 Active
US11532750B2 Semiconductor device and method of manufacture Electricity 0 Active
US12094761B2 FETs and methods of forming FETs Electricity 0 Active
US12243931B2 Source/drain epitaxial layers for transistors Electricity 0 Active
US11600715B2 FETs and methods of forming FETs Electricity 0 Active
US11804487B2 Source/drain regions of semiconductor devices and methods of forming the same Electricity 0 Active
US11527650B2 FinFET device having a source/drain region with a multi-sloped undersurface Electricity 0 Active
US12074071B2 Source/drain structures and method of forming Electricity 0 Active
US12132118B2 Semiconductor device having a multilayer source/drain region and methods of manufacture Emerging Cross-Sectional Technologies 0 Active
US11018224B2 Semiconductor device with epitaxial source/drain Electricity 0 Active
US11688793B2 Integrated circuit structure and manufacturing method thereof Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.