Dense redistribution layers in semiconductor packages and methods of forming the same
US10340206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2016 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Oct 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method embodiment includes forming a patterned first photo resist over a seed layer. A first opening in the patterned first photo resist exposes the seed layer. The method further includes plating a first conductive material in the first opening on the seed layer, removing the patterned first photo resist, and after removing the patterned first photo resist, forming a patterned second photo resist over the first conductive material. A second opening in the patterned second photo resist exposes a portion of the first conductive material. The method further includes plating a second conductive material in the second opening on the first conductive material, removing the patterned second photo resist, and after removing the patterned second photo resist, depositing a dielectric layer around the first conductive material and the second conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.