Semiconductor structure and fabrication method thereof

US10340271B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Yan Wang · Shanghai, CN
• Fang Yuan XIAO · Shanghai, CN
• Hai Yang Zhang · Shanghai, CN

Key dates

• Filing date: Aug 17, 2017
• Grant date: Jul 2, 2019
• Expiry date: Aug 23, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication method includes providing a semiconductor substrate having a first region, a second region and an isolation region between the first region and the second region; forming a plurality of first fins on the semiconductor substrate in the first region and a plurality of second fins on the semiconductor substrate in the second region; forming an isolation structure, covering portions of side surfaces of the first fins and the second fins and with a top surface below the top surfaces of the first fins and the second fins, over the semiconductor substrate; and forming an isolation layer over the isolation structure in the isolation region and with a top surface coplanar or above the top surfaces of the first fins and the second fins.