Method of forming a dual metal interconnect structure
US10340355B2 · kind B2 · utility
3Cited by
14References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2017 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Jul 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming source/drain contact structures that exhibit low contact resistance and improved electromigration properties is provided. After forming a first contact conductor portion composed of a metal having a high resistance to electromigration, such as, for example, tungsten, at a bottom portion of source/drain contact trench to form direct contact with a source/drain region of a field effect transistor, a second contact conductor portion composed of a highly conductive metal, such as, for example, copper or a copper alloy, is formed over the first contact conductor portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.