Semiconductor device and method for fabricating the same
US10340358B2 · kind B2 · utility
4Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2018 |
| Grant date | Jul 2, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from the first barrier film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.