Compensated photonic device structure and fabrication method thereof

US10340409B2 · kind B2 · utility

Assignee

• SiFotonics Technologies Co., Ltd. · KY

Inventors

• Mengyuan Huang · Cupertino, US
• Liangbo Wang · Beijing, CN
• Su Li · Beijing, CN
• Tuo Shi · 安丰镇, CN
• Pengfei Cai · Beijing, CN
• Wang Chen · Beijing, CN
• Ching-yin Hong · Lexington, US
• Dong Pan · Taipei, TW

Key dates

• Filing date: Jun 2, 2017
• Grant date: Jul 2, 2019
• Expiry date: Jun 2, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/223

Abstract

Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.