Dark field wafer nano-defect inspection system with a singular beam
US10345246B2 · kind B2 · utility
18Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Jun 1, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/06113
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.