Memory system and method of performing a read operation on a memory cell of a non-volatile semiconductor storage device including a plurality of blocks of memory
US10346068B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Aug 31, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/563
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory system includes a semiconductor storage device including a plurality of blocks of memory cells, each memory cell storing data in a non-volatile state, a controller configured to issue commands to the semiconductor storage device to perform various operations, including a read operation, a write operation, an erase operation, and a dummy operation. The read operation is an operation in which the semiconductor storage device reads data from a memory cell of a block in the semiconductor storage device, and outputs the read data to the controller, and the dummy operation is an operation in which the semiconductor storage device reads data from a memory cell of a block in the semiconductor storage device and does not output the read data to the controller and does not write the data to any of the memory cells of the blocks in the semiconductor storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.