Systems and methods utilizing parallel configurations of magnetic memory devices
US10347308B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic storage device is provided. The magnetic storage device comprises a magnetic memory cell, which includes two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a first electrical characteristic and a second MTJ has a second magnetic characteristic and a second electrical characteristic, wherein the first magnetic characteristic is distinct from the second magnetic characteristic. The magnetic memory cell further comprises a bottom electrode and a top electrode, wherein the two or more MTJs are arranged between the top and bottom electrode in parallel with respect to each other. The magnetic storage device further comprises readout circuitry coupled to the bottom electrode or the top electrode of the magnetic memory cell and write circuitry coupled to the bottom electrode or the top electrode of the magnetic memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.