Rare earth nitride structure or device and fabrication method
US10347483B2 · kind B2 · utility
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0References
24Claims
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Inventors
Key dates
| Filing date | May 29, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | May 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structure or device comprising a hexagonal crystal layer or hexagonal crystal substrate, and a (001)-oriented rare earth nitride epitaxial layer on the hexagonal crystal layer or hexagonal crystal substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.