Methods of minimizing plasma-induced sidewall damage during low K etch processes

US10347498B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Chih-Yu Hsu · Xinfeng, TW
• Peng Shen · Beijing, CN
• Nathan Stafford · Happy Valley, US

Key dates

• Filing date: Mar 16, 2018
• Grant date: Jul 9, 2019
• Expiry date: Mar 16, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/6831
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for minimizing plasma-induced sidewall damage during low k etch processes are disclosed. The methods etch the low k layers using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N≡C—R; (N≡C—)—(R)—(—C≡N); Rx[—C═N(Rz)]y; and R(3-a)—N—Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.