Inventor · Happy Valley, OR, US

Nathan Stafford

30Patents

3h-index

32Co-inventors

59Inventor score

Filing activity: Dec 11, 2008 → Oct 25, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9514959B2	Fluorocarbon molecules for high aspect ratio oxide etch	Chemistry; Metallurgy	12	Active
US10629451B1	Method to improve profile control during selective etching of silicon nitride spacers	Electricity	4	Active
US10410878B2	Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applications	Electricity	4	Active
US10607850B2	Iodine-containing compounds for etching semiconductor structures	Electricity	3	Active
US10529581B2	SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications	Electricity	3	Active
US10103031B2	Chemistries for TSV/MEMS/power device etching	Chemistry; Metallurgy	1	Active
US9892932B2	Chemistries for TSV/MEMS/power device etching	Chemistry; Metallurgy	1	Active
US11430663B2	Iodine-containing compounds for etching semiconductor structures	Electricity	1	Active
US8664446B1	Purification of trimethylamine	Chemistry; Metallurgy	1	Active
US8191397B2	Methods for checking and calibrating concentration sensors in a semiconductor processing chamber	Physics	1	Active
US11152223B2	Fluorocarbon molecules for high aspect ratio oxide etch	Chemistry; Metallurgy	0	Active
US12224177B2	Method of running an etch process in higher selectivity to mask and polymer regime by using a cyclic etch process	Electricity	0	Active
US11469110B2	Method to improve profile control during selective etching of silicon nitride spacers	Electricity	0	Active
US10720335B2	Chemistries for TSV/MEMS/power device etching	Chemistry; Metallurgy	0	Active
US10381240B2	Fluorocarbon molecules for high aspect ratio oxide etch	Chemistry; Metallurgy	0	Active
US12188123B2	Deposition of iodine-containing carbon films	Chemistry; Metallurgy	0	Active
US12083493B2	Selective adsorption of halocarbon impurities containing cl, br and i in fluorocarbons or hydrofluorocarbons using adsorbent supported metal oxide	Performing Operations; Transporting	0	Active
US11024513B2	Methods for minimizing sidewall damage during low k etch processes	Electricity	0	Active
US12106971B2	High conductive passivation layers and method of forming the same during high aspect ratio plasma etching	Electricity	0	Active
US8974758B2	Methods of purifying COS	Emerging Cross-Sectional Technologies	0	Active
US8361199B2	Purification of H2Se	Performing Operations; Transporting	0	Active
US12341017B2	Etching methods with alternating non-plasma and plasma etching processes	Electricity	0	Active
US12327731B2	Etching gas mixture and method of manufacturing integrated circuit device using the same	Electricity	0	Active
US10115600B2	Method of etching semiconductor structures with etch gas	Performing Operations; Transporting	0	Active
US10347498B2	Methods of minimizing plasma-induced sidewall damage during low K etch processes	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.