Semiconductor structure and fabrication method thereof

US10347578B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Cheng Zhang · Ann Arbor, US
• Qi He · Zhuqiao, CN
• Yan Wang · Shanghai, CN

Key dates

• Filing date: Aug 10, 2017
• Grant date: Jul 9, 2019
• Expiry date: Aug 10, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5226
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a base substrate including a device region and a peripheral region. The base substrate includes a base interconnection structure. The method also includes forming a medium layer on the base substrate. In addition, the method includes forming a first trench having a first depth in the peripheral region, and forming a second trench having a second depth in the device region. The second depth is greater than the first depth. Moreover, the method includes forming a first opening in the device region and forming a second opening in the peripheral region. Further, the method includes forming a first interconnection structure by filling the first opening with a conductive material and forming a second interconnection structure by filling the second opening with the conductive material.