Structure for radio-frequency applications
US10347597B2 · kind B2 · utility
2Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2015 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Jul 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for radiofrequency applications includes: a support substrate of high-resistivity silicon comprising a lower part and an upper part having undergone a p-type doping to a depth D; a mesoporous trapping layer of silicon formed in the doped upper part of the support substrate. The depth D is less than 1 micron and the trapping layer has a porosity rate of between 20% and 60%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.