Patent · US Active

Semiconductor devices

US10347641B2 · kind B2 · utility

2Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 16, 2017
Grant dateJul 9, 2019
Priority date
Expiry dateNov 16, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/34

Abstract

A semiconductor device includes a substrate including a cell region and peripheral region and bottom electrodes on the substrate. The bottom electrodes are arranged in a first row and a second row each extending in a first direction. The first row and the second row are adjacent to each other in a second direction perpendicular to the first direction. The bottom electrodes in the first row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a first distance in the first direction. The bottom electrodes in the second row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a second distance in the first direction. The outermost bottom electrode in the first row is on the peripheral region of the substrate. The outermost bottom electrode in the second row is on the cell region of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.