Semiconductor device
US10347763B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Sep 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.